Microwave dielectric properties of BaTiO3 and Ba0.5Sr0.5TiO3 thin films on (001) MgO

被引：15

作者：

Alldredge, L. M. B. ^{[1
]}

Chang, Wontae ^{[1
]}

Kirchoefer, Steven W. ^{[1
]}

Pond, Jeffrey M. ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 22期

关键词：

barium compounds; compressive strength; dielectric losses; dielectric polarisation; ferroelectric thin films; microwave materials; permittivity; piezoelectricity; strontium compounds; DEPENDENCE;

D O I：

10.1063/1.3264051

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microwave properties of BaTiO3 and Ba0.5Sr0.5TiO3 films were characterized as a function of in-plane film strain, crystallographic direction, film distortion, and dc bias. The strain dependence of BaTiO3 and Ba0.5Sr0.5TiO3 films showed an opposite pattern at room temperature, going from compression to tension, or vice versa. At zero bias, the dielectric constant and dielectric loss showed little dependence on direction ([100] and [110]). However, the tunability was consistently smaller along the [110] direction than along [100]. These observations agreed well with our previous work on how polarizations (both ionic and spontaneous) form and contribute to the nonlinear dielectric behavior.

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页数：3

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