Future challenges and directions for nitride materials and light emitters

被引：20

作者：

Akasaki, I ^{[1
]}

Wetzel, C ^{[1
]}

机构：

[1] MEIJO UNIV,DEPT ELECT & ELECT ENGN,NAGOYA,AICHI 468,JAPAN

来源：

PROCEEDINGS OF THE IEEE | 1997年 / 85卷 / 11期

关键词：

high-temperature techniques; light emitting diodes; materials science and technology; semiconductor devices; semiconductor lasers; semiconductor materials; power semiconductor devices;

D O I：

10.1109/5.649652

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A review is presented of future issues on wide-bandgap group-III nitride materials and device technology for optoelectronic and high-temperature devices.

引用

页码：1750 / 1751

页数：2