Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD

被引:197
作者
Dingemans, G. [1 ]
van de Sanden, M. C. M. [1 ]
Kessels, W. M. M. [1 ]
机构
[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
关键词
aluminium compounds; atomic layer deposition; elemental semiconductors; passivation; plasma CVD; silicon; thin films; SILICON SOLAR-CELLS;
D O I
10.1149/1.3276040
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The material properties and c-Si surface passivation have been investigated for Al2O3 films deposited using thermal and plasma atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD) for temperatures (T-dep) between 25 and 400 degrees C. Optimal surface passivation by ALD Al2O3 was achieved at T-dep=150-250 degrees C with S-eff < 3 cm/s for similar to 2 cm p-type c-Si. PECVD Al2O3 provided a comparable high level of passivation for T-dep=150-300 degrees C and contained a high fixed negative charge density of similar to 6x10(12) cm(-2). Outstanding surface passivation performance was therefore obtained for thermal ALD, plasma ALD, and PECVD for a relatively wide range of Al2O3 material properties.
引用
收藏
页码:H76 / H79
页数:4
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