The interface reaction of high-k La2Hf2O7/Si thin film grown by pulsed laser deposition

被引：18
作者：
Cheng, Xuerui [2 ]
Qi, Zeming [1 ]
Zhang, Guobin [1 ]
Chen, Yonghu [2 ]
Li, Tingting [1 ]
Pan, Guoqiang [1 ]
Yin, Min [2 ]
机构：
[1] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China
[2] Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2009年 / 256卷 / 03期
关键词：
Thin films; Laser deposition; Interface; THERMAL-STABILITY; GATE DIELECTRICS; ELECTRICAL-PROPERTIES; HAFNIUM OXIDE; SILICATE; SI; SI(100);
D O I：
10.1016/j.apsusc.2009.08.070
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The La2Hf2O7 films have been deposited on Si (1 0 0) substrate by using pulsed laser deposition (PLD) method. X-ray diffraction (XRD) demonstrates that the as-grown film is amorphous and crystallizes after 1000 degrees C annealing. The interface structure is systematically studied by Synchrotron X-ray reflectivity (XRR), Fourier transform infrared (FTIR) and X-ray photoelectron spectroscopy (XPS). Silicide, silicate and SiOx formations from interfacial reaction are observed on the surface of the Si substrate in the as-grown film. The impact of silicide formation on the electrical properties is revealed by capacitance voltage (C-V) measurements. By post-deposition annealing (PDA), silicide can be effectively eliminated and C-V property is obviously improved. (C) 2009 Elsevier B. V. All rights reserved.
引用
收藏
页码：838 / 841
页数：4
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