Small-signal cross-gain modulation of quantum-dot semiconductor optical amplifiers

被引：22

作者：

Kim, Jungho ^{[1
]}

Chuang, Shun Lien ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, William L Everitt Lab, Urbana, IL 61801 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 21-24期

基金：

美国国家科学基金会;

关键词：

cross-gain modulation; quantum dot; semiconductor optical amplifiers; wavelength conversion;

D O I：

10.1109/LPT.2006.887337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The small-signal cross-gain modulation (XGM) characteristics of a p-doped quantum-dot (QD) semiconductor optical amplifier (SOA) are measured and compared with a theoretical model. The measured small-signal XGM responses show an average 3-dB bandwidth of 3.5 GHz and have no significant dependence on the pump-probe detuning wavelength. This indicates that the main XGM mechanism of the p-doped QD SOA is the total carrier density change rather than spectral hole burning. The measured small-signal conversion efficiency is compared with a theoretical model, which is derived from rate equations for QD SOAs. Based on our theoretical results, we find that the reduced inter-subband (from the QD excited to ground state) carrier relaxation time due to p-type doping will decrease the small-signal 3-dB XGM bandwidth of QD SOAs.

引用

页码：2538 / 2540

页数：3

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