Electronic structure and exchange interaction in Ga1-x Mn x As and In1-x Mn x Sb magnetic semiconductors

被引：8

作者：

Yarzhemsky, V. G. ^{[1
]}

Murashov, S. V. ^{[1
]}

Izotov, A. D. ^{[1
]}

机构：

[1] Russian Acad Sci, NS Kurnakov Gen & Inorgan Chem Inst, Leninskii Pr 31, Moscow 119991, Russia

来源：

INORGANIC MATERIALS | 2016年 / 52卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

diluted magnetic semiconductors; spintronics; exchange interaction; FERROMAGNETISM;

D O I：

10.1134/S0020168516020175

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have calculated the electronic structure of Ga1-x Mn (x) As and In1-x Mn (x) Sb diluted magnetic semiconductors and shown that, in agreement with recent photoelectron spectroscopy data, the Mn 4s and Mn 3d orbitals are hybridized with the valence band of the host semiconductor. A new approach has been developed for calculating exchange interaction in diluted magnetic semiconductors, which is based on the spin polarization of s-electrons at a magnetic center due to single-center exchange s-d matrix elements. The magnitude of exchange interaction calculated using Hartree-Fock atomic wave functions and the electrondensity-functional approach agrees well with previous data.

引用

页码：89 / 93

页数：5

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