Emerging trends in surface metrology

被引：63
作者：
Lonardo, PM [1 ]
Lucca, DA
De Chiffre, L
机构：
[1] Univ Genoa, Genoa, Italy
[2] Oklahoma State Univ, Stillwater, OK 74078 USA
[3] Tech Univ Denmark, DK-2800 Lyngby, Denmark
来源：
CIRP ANNALS-MANUFACTURING TECHNOLOGY | 2002年 / 51卷 / 02期
关键词：
surface; metrology; surface integrity;
D O I：
10.1016/S0007-8506(07)61708-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Recent advancements and some emerging trends in the methods and instruments used for surface and near surface characterisation are presented, considering the measurement of both topography and physical properties. In particular, surfaces that present difficulties in measurement or require new procedures are considered, with emphasis on measurements approaching the nanometre scale. Examples of new instruments and promising innovations for roughness measurement and surface integrity characterisation are presented. The new needs for tolerancing, traceability and calibration are also addressed.
引用
收藏
页码：701 / 723
页数：23
相关论文
共 186 条
[51]   Indentation induced dislocation nucleation: The initial yield point [J].
Gerberich, WW ;
Nelson, JC ;
Lilleodden, ET ;
Anderson, P ;
Wyrobek, JT .
ACTA MATERIALIA, 1996, 44 (09) :3585-3598
[52]  
GIRAULT P, 1995, J MATER SCI LETT, V14, P449
[53]  
Göken M, 2001, Z METALLKD, V92, P1061
[54]   Accurate topographic images using a measuring atomic force microscope [J].
Gonda, S ;
Doi, T ;
Kurosawa, T ;
Tanimura, Y ;
Hisata, N ;
Yamagishi, T ;
Fujimoto, H ;
Yukawa, H .
APPLIED SURFACE SCIENCE, 1999, 144-45 :505-509
[55]  
GRABIEC P, 2002, IN PRESS MICROELECTR
[56]   Study of the effect of polarity and of dislocations on the electrical and optoelectronic properties of p-type Cd0.96Zn0.04Te [J].
Guergouri, K ;
Teyar, E ;
Triboulet, R .
JOURNAL OF CRYSTAL GROWTH, 2000, 216 (1-4) :127-133
[57]   Reflection properties of nanostructure-arrayed silicon surfaces [J].
Hadobás, K ;
Kirsch, S ;
Carl, A ;
Acet, M ;
Wassermann, EF .
NANOTECHNOLOGY, 2000, 11 (03) :161-164
[58]  
HAITJEMA H, 2000, P 1 EUSP TOP C FABR, V1, P54
[59]  
HANSEN HN, 2002, IN PRESS ANN CIRP, V51
[60]   Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition [J].
Hansen, PJ ;
Strausser, YE ;
Erickson, AN ;
Tarsa, EJ ;
Kozodoy, P ;
Brazel, EG ;
Ibbetson, JP ;
Mishra, U ;
Narayanamurti, V ;
DenBaars, SP ;
Speck, JS .
APPLIED PHYSICS LETTERS, 1998, 72 (18) :2247-2249
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