Deep level defects which limit current gain in 4H SiC bipolar junction transistors

被引:17
作者
Cochrane, C. J. [1 ]
Lenahan, P. M.
Lelis, A. J.
机构
[1] Penn State Univ, University Pk, PA 16802 USA
[2] US Army Res Lab, Adelphi, MD 20783 USA
关键词
D O I
10.1063/1.2714285
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors employ a very sensitive electrically detected electron spin resonance technique called spin dependent recombination to observe recombination centers in fully processed 4H SiC n-p-n bipolar junction transistors. Their measurements indicate that the observed dominating recombination defect in these transistors is an intrinsic center of high symmetry, most likely a vacancy. This defect likely plays a dominating role in limiting the current gain in these 4H SiC devices. (c) 2007 American Institute of Physics.
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页数:3
相关论文
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