Determination of trap depth and trap density in Se70Te30-xZnx thin films using thermally stimulated current measurements

被引：16

作者：

Yadav, S. ^{[1
]}

Pal, R. K. ^{[1
]}

Sharma, S. K. ^{[1
]}

Kumar, A. ^{[1
]}

机构：

[1] Harcourt Butler Technol Inst, Dept Phys, Kanpur 208002, Uttar Pradesh, India

来源：

PHYSICA B-CONDENSED MATTER | 2009年 / 404卷 / 16期

关键词：

Chalcogenide glasses; Thermally stimulated currents; Trap depth and trap density; GE-AS-S; 2ND-HARMONIC GENERATION; OPTICAL-PROPERTIES; ELECTRON-BEAM; GLASSES; SEMICONDUCTORS; DIFFUSION; ZINC;

D O I：

10.1016/j.physb.2009.04.015

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In the present paper concentration of traps (N-t) and trap depth (E-t) have been calculated by thermally stimulated current (TSC) measurements in amorphous Se70Te30-xZnx (x = 2, 4) thin films. These measurements are carried out at three different heating rates. It is observed that the amount of thermally stimulated current gradually increases and the temperature (T-m), at which maxima in TSC occurs, shifts to higher temperatures with increasing heating rates (beta) as expected. The trap depth is found to be quite different for x = 2 and x = 4. The concentration of traps also increases slightly at higher concentration of Zn. (C) 2009 Published by Elsevier B.V.

引用

页码：2225 / 2228

页数：4

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