共 11 条
Low-voltage operation of n-type organic field-effect transistors with ionic liquid
被引:42
作者:

论文数: 引用数:
h-index:
机构:

Yamagishi, M.
论文数: 0 引用数: 0
h-index: 0
机构:
Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan

Ono, S.
论文数: 0 引用数: 0
h-index: 0
机构:
Cent Res Inst Elect Power Ind, Tokyo 2018511, Japan Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan

Takeya, J.
论文数: 0 引用数: 0
h-index: 0
机构:
Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan
Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3330012, Japan Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan
机构:
[1] Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan
[2] Cent Res Inst Elect Power Ind, Tokyo 2018511, Japan
[3] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3330012, Japan
关键词:
electrochemistry;
electrolytes;
ionic conductivity;
organic field effect transistors;
organic semiconductors;
thin film transistors;
viscosity;
CIRCUITS;
D O I:
10.1063/1.3225153
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
High performance n-type organic field-effect transistors are developed to achieve high transconductance and low-threshold voltage using ionic-liquid electrolyte for intense electrostatic gating. Tetracyanoquinodimethane single crystals and C(60) thin films are interfaced with ionic liquid of 1-ethyl-3-methyl-imidazolium bis(trifluoromethanesulfonyl)imide known for its low viscosity and high ionic conductivity, so that high-density electrons are rapidly accumulated in the semiconductor surfaces with the application of minimum gate voltages, forming 1-nm thick electric double layers to concentrate electric field as high as 1 MV/cm. The C(60) transistor shows the highest normalized transconductance among reported n-type organic transistors, together with minimum threshold voltage.
引用
收藏
页数:3
相关论文
共 11 条
[1]
General observation of n-type field-effect behaviour in organic semiconductors
[J].
Chua, LL
;
Zaumseil, J
;
Chang, JF
;
Ou, ECW
;
Ho, PKH
;
Sirringhaus, H
;
Friend, RH
.
NATURE,
2005, 434 (7030)
:194-199

Chua, LL
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

Zaumseil, J
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

Chang, JF
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

Ou, ECW
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

Ho, PKH
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

Sirringhaus, H
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

Friend, RH
论文数: 0 引用数: 0
h-index: 0
机构: Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[2]
Large-scale complementary integrated circuits based on organic transistors
[J].
Crone, B
;
Dodabalapur, A
;
Lin, YY
;
Filas, RW
;
Bao, Z
;
LaDuca, A
;
Sarpeshkar, R
;
Katz, HE
;
Li, W
.
NATURE,
2000, 403 (6769)
:521-523

Crone, B
论文数: 0 引用数: 0
h-index: 0
机构: Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

Dodabalapur, A
论文数: 0 引用数: 0
h-index: 0
机构: Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

Lin, YY
论文数: 0 引用数: 0
h-index: 0
机构: Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

Filas, RW
论文数: 0 引用数: 0
h-index: 0
机构: Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

Bao, Z
论文数: 0 引用数: 0
h-index: 0
机构: Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

LaDuca, A
论文数: 0 引用数: 0
h-index: 0
机构: Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

Sarpeshkar, R
论文数: 0 引用数: 0
h-index: 0
机构: Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

Katz, HE
论文数: 0 引用数: 0
h-index: 0
机构: Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

Li, W
论文数: 0 引用数: 0
h-index: 0
机构: Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
[3]
Flexible active-matrix displays and shift registers based on solution-processed organic transistors
[J].
Gelinck, GH
;
Huitema, HEA
;
Van Veenendaal, E
;
Cantatore, E
;
Schrijnemakers, L
;
Van der Putten, JBPH
;
Geuns, TCT
;
Beenhakkers, M
;
Giesbers, JB
;
Huisman, BH
;
Meijer, EJ
;
Benito, EM
;
Touwslager, FJ
;
Marsman, AW
;
Van Rens, BJE
;
De Leeuw, DM
.
NATURE MATERIALS,
2004, 3 (02)
:106-110

Gelinck, GH
论文数: 0 引用数: 0
h-index: 0
机构:
Philips Res Labs, NL-5656 AA Eindhoven, Netherlands Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

Huitema, HEA
论文数: 0 引用数: 0
h-index: 0
机构:
Philips Res Labs, NL-5656 AA Eindhoven, Netherlands Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

Van Veenendaal, E
论文数: 0 引用数: 0
h-index: 0
机构:
Philips Res Labs, NL-5656 AA Eindhoven, Netherlands Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

Cantatore, E
论文数: 0 引用数: 0
h-index: 0
机构:
Philips Res Labs, NL-5656 AA Eindhoven, Netherlands Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

Schrijnemakers, L
论文数: 0 引用数: 0
h-index: 0
机构:
Philips Res Labs, NL-5656 AA Eindhoven, Netherlands Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

Van der Putten, JBPH
论文数: 0 引用数: 0
h-index: 0
机构:
Philips Res Labs, NL-5656 AA Eindhoven, Netherlands Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

Geuns, TCT
论文数: 0 引用数: 0
h-index: 0
机构:
Philips Res Labs, NL-5656 AA Eindhoven, Netherlands Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

Beenhakkers, M
论文数: 0 引用数: 0
h-index: 0
机构:
Philips Res Labs, NL-5656 AA Eindhoven, Netherlands Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

Giesbers, JB
论文数: 0 引用数: 0
h-index: 0
机构:
Philips Res Labs, NL-5656 AA Eindhoven, Netherlands Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

Huisman, BH
论文数: 0 引用数: 0
h-index: 0
机构:
Philips Res Labs, NL-5656 AA Eindhoven, Netherlands Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

Meijer, EJ
论文数: 0 引用数: 0
h-index: 0
机构:
Philips Res Labs, NL-5656 AA Eindhoven, Netherlands Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

Benito, EM
论文数: 0 引用数: 0
h-index: 0
机构:
Philips Res Labs, NL-5656 AA Eindhoven, Netherlands Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

Touwslager, FJ
论文数: 0 引用数: 0
h-index: 0
机构:
Philips Res Labs, NL-5656 AA Eindhoven, Netherlands Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

Marsman, AW
论文数: 0 引用数: 0
h-index: 0
机构:
Philips Res Labs, NL-5656 AA Eindhoven, Netherlands Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

Van Rens, BJE
论文数: 0 引用数: 0
h-index: 0
机构:
Philips Res Labs, NL-5656 AA Eindhoven, Netherlands Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

De Leeuw, DM
论文数: 0 引用数: 0
h-index: 0
机构:
Philips Res Labs, NL-5656 AA Eindhoven, Netherlands Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
[4]
Low-voltage-operating complementary inverters with C60 and pentacene transistors on glass substrates
[J].
Kitamura, Masatoshi
;
Arakawa, Yasuhiko
.
APPLIED PHYSICS LETTERS,
2007, 91 (05)

论文数: 引用数:
h-index:
机构:

Arakawa, Yasuhiko
论文数: 0 引用数: 0
h-index: 0
机构: Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan
[5]
Bottom-contact fullerene C60 thin-film transistors with high field-effect mobilities
[J].
Kitamura, Masatoshi
;
Aomori, Shigeru
;
Na, Jong Ho
;
Arakawa, Yasuhiko
.
APPLIED PHYSICS LETTERS,
2008, 93 (03)

论文数: 引用数:
h-index:
机构:

Aomori, Shigeru
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan
Sharp Co Ltd, Adv Technol Res Labs, Nara 6328567, Japan Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

Na, Jong Ho
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan
Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

Arakawa, Yasuhiko
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan
Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan
[6]
Ultralow-power organic complementary circuits
[J].
Klauk, Hagen
;
Zschieschang, Ute
;
Pflaum, Jens
;
Halik, Marcus
.
NATURE,
2007, 445 (7129)
:745-748

Klauk, Hagen
论文数: 0 引用数: 0
h-index: 0
机构: Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

Zschieschang, Ute
论文数: 0 引用数: 0
h-index: 0
机构: Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

论文数: 引用数:
h-index:
机构:

Halik, Marcus
论文数: 0 引用数: 0
h-index: 0
机构: Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany
[7]
High-performance n- and p-type single-crystal organic transistors with free-space gate dielectrics
[J].
Menard, E
;
Podzorov, V
;
Hur, SH
;
Gaur, A
;
Gershenson, ME
;
Rogers, JA
.
ADVANCED MATERIALS,
2004, 16 (23-24)
:2097-2101

Menard, E
论文数: 0 引用数: 0
h-index: 0
机构: Univ Illinois, Dept Mat Sci & Engn, Beckman Inst, 1304 W Green St, Urbana, IL 61801 USA

Podzorov, V
论文数: 0 引用数: 0
h-index: 0
机构: Univ Illinois, Dept Mat Sci & Engn, Beckman Inst, 1304 W Green St, Urbana, IL 61801 USA

Hur, SH
论文数: 0 引用数: 0
h-index: 0
机构: Univ Illinois, Dept Mat Sci & Engn, Beckman Inst, 1304 W Green St, Urbana, IL 61801 USA

Gaur, A
论文数: 0 引用数: 0
h-index: 0
机构: Univ Illinois, Dept Mat Sci & Engn, Beckman Inst, 1304 W Green St, Urbana, IL 61801 USA

Gershenson, ME
论文数: 0 引用数: 0
h-index: 0
机构: Univ Illinois, Dept Mat Sci & Engn, Beckman Inst, 1304 W Green St, Urbana, IL 61801 USA

Rogers, JA
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Illinois, Dept Mat Sci & Engn, Beckman Inst, 1304 W Green St, Urbana, IL 61801 USA Univ Illinois, Dept Mat Sci & Engn, Beckman Inst, 1304 W Green St, Urbana, IL 61801 USA
[8]
Exploiting ionic coupling in electronic devices: Electrolyte-gated organic field-effect transistors
[J].
Panzer, Matthew J.
;
Frisbie, C. Daniel
.
ADVANCED MATERIALS,
2008, 20 (16)
:3177-3180

Panzer, Matthew J.
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, Dept Elect Engn & Comp Sci, Lab Organ Opt & Elect, Cambridge, MA 02139 USA Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

Frisbie, C. Daniel
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
[9]
Electrolyte-gated charge accumulation in organic single crystals
[J].
Shimotani, Hidekazu
;
Asanuma, Haruhiko
;
Takeya, Jun
;
Iwasa, Yoshihiro
.
APPLIED PHYSICS LETTERS,
2006, 89 (20)

Shimotani, Hidekazu
论文数: 0 引用数: 0
h-index: 0
机构: Tohoku Univ, Mat Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

Asanuma, Haruhiko
论文数: 0 引用数: 0
h-index: 0
机构: Tohoku Univ, Mat Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

Takeya, Jun
论文数: 0 引用数: 0
h-index: 0
机构: Tohoku Univ, Mat Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

Iwasa, Yoshihiro
论文数: 0 引用数: 0
h-index: 0
机构: Tohoku Univ, Mat Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan
[10]
Electronic functionalization of solid-to-liquid interfaces between organic semiconductors and ionic liquids: Realization of very high performance organic single-crystal transistors
[J].
Uemura, T.
;
Hirahara, R.
;
Tominari, Y.
;
Ono, S.
;
Seki, S.
;
Takeya, J.
.
APPLIED PHYSICS LETTERS,
2008, 93 (26)

论文数: 引用数:
h-index:
机构:

Hirahara, R.
论文数: 0 引用数: 0
h-index: 0
机构:
Osaka Univ, Grad Sch Sci, Toyonaka, Osaka 5600043, Japan Osaka Univ, Grad Sch Sci, Toyonaka, Osaka 5600043, Japan

论文数: 引用数:
h-index:
机构:

Ono, S.
论文数: 0 引用数: 0
h-index: 0
机构:
Cent Res Inst Elect Power Ind, Tokyo 2018511, Japan Osaka Univ, Grad Sch Sci, Toyonaka, Osaka 5600043, Japan

Seki, S.
论文数: 0 引用数: 0
h-index: 0
机构:
Cent Res Inst Elect Power Ind, Tokyo 2018511, Japan Osaka Univ, Grad Sch Sci, Toyonaka, Osaka 5600043, Japan

Takeya, J.
论文数: 0 引用数: 0
h-index: 0
机构:
Osaka Univ, Grad Sch Sci, Toyonaka, Osaka 5600043, Japan
Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan Osaka Univ, Grad Sch Sci, Toyonaka, Osaka 5600043, Japan