Pulsed-laser deposited Er:ZnO films for 1.54 μm emission

被引：58

作者：

Pradhan, A. K. ^{[1
]}

Douglas, L. ^{[1
]}

Mustafa, H. ^{[1
]}

Mundle, R. ^{[1
]}

Hunter, D. ^{[1
]}

Bonner, C. E. ^{[1
]}

机构：

[1] Norfolk State Univ, Mat Res Ctr, Norfolk, VA 23504 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 07期

关键词：

D O I：

10.1063/1.2560764

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality Er:ZnO films were grown by the pulsed-laser deposition technique at high temperature followed by in situ annealing. The films demonstrate remarkable crystalline quality and array of self-assembled grains. Although the films show very low electrical resistivity (similar to 6.41x10(-4) Omega cm) at room temperature, a semiconductor-metal transition was observed at 190 K for low doping in contrast to semiconductor behavior for high doping. The films show pronounced room temperature emission at 1.54 mu m, illustrating the activation of Er3+ ions in ZnO matrix. Furthermore, no quenching effects in 1.54 mu m emission characteristics were observed up to 2 wt % of Er doping in ZnO at room temperature. (c) 2007 American Institute of Physics.

引用

页数：3

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