Evidence of space charge regions within semiconductor nanowires from Kelvin probe force microscopy

被引：11

作者：

Narvaez, Angela C. ^{[1
]}

Chiaramonte, Thalita ^{[1
]}

Vicaro, Klaus O. ^{[1
]}

Clerici, Joao H. ^{[1
]}

Cotta, Monica A. ^{[1
]}

机构：

[1] Univ Estadual Campinas, Dept Fis Aplicada, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazil

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 46期

基金：

巴西圣保罗研究基金会;

关键词：

SCHOTTKY-BARRIER FORMATION; FIELD-EFFECT TRANSISTORS; QUANTUM DOTS; SURFACE; PERFORMANCE; RESOLUTION; STATES; WIRES;

D O I：

10.1088/0957-4484/20/46/465705

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have studied the equilibrium electrostatic profile of III-V semiconductor nanowires using Kelvin probe force microscopy. Qualitative agreement of the measured surface potential levels and expected Fermi level variation for pure InP and InAs nanowires is obtained from electrical images with spatial resolution as low as 10 nm. Surface potential mapping for pure and heterostructured nanowires suggests the existence of charge transfer mechanisms and the formation of a metal-semiconductor electrical contact at the nanowire apex.

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页数：7

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