Excitons in coupled InAs/InP self-assembled quantum wires

被引:24
|
作者
Sidor, Y.
Partoens, B.
Peeters, F. M.
Ben, T.
Ponce, A.
Sales, D. L.
Molina, S. I.
Fuster, D.
Gonzalez, L.
Gonzalez, Y.
机构
[1] Univ Antwerp, Dept Fysica, B-2020 Antwerp, Belgium
[2] Univ Cadiz, Dept Ciencia Mat, Cadiz, Spain
[3] Univ Cadiz, IMyQI, Cadiz, Spain
[4] CSIC, Inst Microelect Madrid, CNM, Madrid 28760, Spain
来源
PHYSICAL REVIEW B | 2007年 / 75卷 / 12期
关键词
D O I
10.1103/PhysRevB.75.125120
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Optical transitions in coupled InAs/InP self-assembled quantum wires are studied within the single-band effective-mass approximation including effects due to strain. Both vertically and horizontally coupled quantum wires are investigated and the ground state, excited states, and the photoluminescence peak energies are calculated. Where possible, we compare with available photoluminescence data from which it was possible to determine the height of the quantum wires. An anticrossing of the energy of excited states is found for vertically coupled wires signaling a change of symmetry of the exciton wave function. This crossing is the signature of two different coupling regimes.
引用
收藏
页数:7
相关论文
共 50 条
  • [1] Self-assembled InAs quantum wires on InP(001)
    Yang, HY
    Mu, XD
    Zotova, IB
    Ding, YJJ
    Salamo, GJ
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (06) : 3925 - 3927
  • [2] Self-assembled InAs quantum wires on InP(001)
    Wu, J
    Zeng, YP
    Sun, ZZ
    Lin, F
    Xu, B
    Wang, ZG
    SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, 2000, : 205 - 208
  • [3] Self-assembled InAs quantum wires on InP(001)
    Wu, J
    Zeng, YP
    Sun, ZZ
    Lin, F
    Xu, B
    Wang, ZG
    JOURNAL OF CRYSTAL GROWTH, 2000, 219 (1-2) : 180 - 183
  • [4] Pressure dependence of photoluminescence of InAs/InP self-assembled quantum wires
    Ruiz-Castillo, M.
    Segura, A.
    Sans, J. A.
    Martinez-Pastor, J.
    Fuster, D.
    Gonzalez, Y.
    Gonzalez, L.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (01): : 59 - 64
  • [5] Optical transitions and excitonic recombination in InAs/InP self-assembled quantum wires
    Alén, B
    Martínez-Pastor, J
    García-Cristobal, A
    González, L
    García, JM
    APPLIED PHYSICS LETTERS, 2001, 78 (25) : 4025 - 4027
  • [6] Raman study on self-assembled InAs/InAlAs/InP(001) quantum wires
    Lei, W
    Chen, YH
    Xu, B
    Ye, XL
    Zeng, YP
    Wang, ZG
    NANOTECHNOLOGY, 2005, 16 (09) : 1974 - 1977
  • [7] Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires
    Donchev, V.
    Ivanov, Ts
    Angelova, T.
    Cros, A.
    Cantarero, A.
    Shtinkov, N.
    Borisov, K.
    Fuster, D.
    Gonzalez, Y.
    Gonzalez, L.
    11TH INTERNATIONAL CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS11), 2010, 210
  • [8] SURFACE PHOTOVOLTAGE AND PHOTOLUMINECSENCE SPECTROSCOPY OF SELF-ASSEMBLED InAs/InP QUANTUM WIRES
    Donchev, V.
    Ivanov, Ts.
    Angelova, T.
    Cros, A.
    Cantarero, A.
    Shtinkov, N.
    Fuster, D.
    Gonzalez, Y.
    Gonzalez, L.
    11TH INTERNATIONAL CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS11), 2010, 210
  • [9] Luminescence and photocurrent spectroscopy of self-assembled InAs quantum wires on InP(001).
    Suárez, F
    Wang, W
    Fuster, D
    González, L
    González, Y
    Golmayo, D
    García, JM
    Dotor, ML
    2005 International Conference on Indium Phosphide and Related Materials, 2005, : 530 - 532
  • [10] Glancing angle EXAFS of encapsulated self-assembled InAs/InP quantum wires and InAs/GaAs quantum dots
    Renevier, H
    Proietti, MG
    Grenier, S
    Ciatto, G
    González, L
    García, JM
    Gérard, JM
    García, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 101 (1-3): : 174 - 180