Photoluminescence enhancement through vertical stacking of defect-engineered Ge on Si quantum dots

被引：17

作者：

Groiss, Heiko ^{[1
,2
]}

Spindlberger, Lukas ^{[1
]}

Oberhumer, Peter ^{[2
]}

Schaeffler, Friedrich ^{[1
]}

Fromherz, Thomas ^{[1
]}

Grydlik, Martyna ^{[1
]}

Brehm, Moritz ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, Altenberger Str 69, A-4040 Linz, Austria

[2] Johannes Kepler Univ Linz, Ctr Surface & Nanoanalyt, Altenberger Str 69, A-4040 Linz, Austria

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2017年 / 32卷 / 02期

基金：

奥地利科学基金会;

关键词：

quantum dots; Ge ion bombardment; photoluminescence; vertical stacking; silicon germanium; STRANSKI-KRASTANOV GROWTH; SELF-ASSEMBLED ISLANDS; OPTICAL-PROPERTIES; LAYERS; CRYSTALS;

D O I：

10.1088/1361-6641/aa5697

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we show that the room-temperature photoluminescence intensity from Ge ion-bombarded (GIB) epitaxial Ge on Si quantum dots (QD) can be improved by their vertical stacking. We stress that the growth of GIB-QD multilayers is more demanding compared to all-crystalline epitaxial QDs, as a consequence of local amorphous regions within the GIB-QDs required during their genesis. We show that in spite of those amorphous regions, for accurately chosen growth temperatures of the Si spacer layers separating the GIB-QD layers, multiple GIB-QD layers can be stacked without detrimental break-down of epitaxial growth. Compared to a single GIB-QD layer, we observe a 650% increase in PL intensity for an eleven-layer GIB-QD stack, indicating that such multilayers are promising candidates as gain material for all-group-IV nano-photonic lasers.

引用

页数：5

共 29 条

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