Resonant level formed by tin in Bi2Te3 and the enhancement of room-temperature thermoelectric power

被引：211

作者：

Jaworski, Christopher M. ^{[1
]}

Kulbachinskii, Vladimir ^{[2
]}

Heremans, Joseph P. ^{[1
,3
]}

机构：

[1] Ohio State Univ, Dept Mech Engn, Columbus, OH 43210 USA

[2] Moscow MV Lomonosov State Univ, Low Temp Phys Dept, Fac Phys, Moscow 119991, Russia

[3] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 23期

关键词：

bismuth compounds; cryogenics; electronic density of states; impurities; Shubnikov-de Haas effect; thermoelectric power; thermomagnetic effects; tin; valence bands; VALENCE-BAND; HALL; BI2-XSNXTE3; SCATTERING; CARRIERS;

D O I：

10.1103/PhysRevB.80.233201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tin is a known resonant impurity in the valence band of Bi2Te3 that was previously reported to enhance the thermoelectric power S of the host material at cryogenic temperatures through resonant scattering. We show here that Sn provides an excess density of states (DOS) about 15 meV below the valence band edge and that it is the increases in DOS itself that enhances S of this technologically important semiconductor even at room temperature. The experimental proof for the existence of this resonant level comes from Shubnikov-de Haas measurements combined with galvanomagnetic and thermomagnetic properties measurements.

引用

页数：4

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