Temperature Dependence of the Solubility of Nitrogen in Liquid Silicon Equilibrated with Silicon Nitride

被引：10

作者：

Dalaker, Halvor ^{[1
]}

Tangstad, Merete ^{[1
]}

机构：

[1] Norwegian Univ Sci & Technol, Dept Mat Sci & Engn, N-7491 Trondheim, Norway

来源：

MATERIALS TRANSACTIONS | 2009年 / 50卷 / 11期

关键词：

silicon; nitrogen; solubility; thermodynamics; OXYGEN;

D O I：

10.2320/matertrans.M2009164

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The solubility of nitrogen in liquid silicon equilibrated with silicon nitride and its dependence on the composition of the atmosphere has been studied in the temperature region 1428-1542 degrees C. High purity silicon was melted in silicon nitride crucibles under Ar and N-2 atmospheres. The equilibrium was observed to be established within minutes, after which no evolution of the nitrogen content with time could be observed. The nitrogen transfer between the Si3N4-crucible and the melt was faster than the transfer via the gas-phase to such an extent that the composition of the atmosphere did not influence the solubility limit. The solubility limit as a function of temperature was found to follow: C-N(T, C-B) = 7957.9 * exp(-24376/T) At the melting point of silicon, this equation gives the solubility of nitrogen as 42 ppm mass. From this equation, a thermodynamic derivation led to the following expression for the dissolution energy of nitrogen: Delta G(0) = -1.63 * 10(4) + 26T [doi: 10.2320/matertrans.M2009164]

引用

页码：2541 / 2544

页数：4

共 11 条

[1] Effect of nitrogen contamination by crucible encapsulation on polycrystalline silicon material quality [J].

Binetti, S ;

Acciarri, M ;

Savigni, C ;

Brianza, A ;

Pizzini, S ;

Musinu, A .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 36 (1-3) :68-72

[2]

KUBASCHEWSKI O, 1979, METALLURGICAL THERMO, P383

[3] NITROGEN SOLUBILITY IN LIQUID SILICON [J].

NARUSHIMA, T ;

UEDA, N ;

TAKEUCHI, M ;

ISHII, F ;

IGUCHI, Y .

MATERIALS TRANSACTIONS JIM, 1994, 35 (11) :821-826

[4] OXYGEN SOLUBILITY IN LIQUID SILICON [J].

NARUSHIMA, T ;

MATSUZAWA, K ;

MUKAI, Y ;

IGUCHI, Y .

MATERIALS TRANSACTIONS JIM, 1994, 35 (08) :522-528

[5]

RAKOTONIAINA JP, 2005, P 20 EUR PHOT SOL EN, P773

[6]

RYNINGEN B, 2007, P 22 EUR PHOT SOL EN, P1086

[7]

SOPORI B, 2005, MATER RES SOC S P, P864

[8]

Tanahashi M, 1998, SHIGENTO SOZAI, V114, P807

[9] A Thermochemical Database for the Solar Cell Silicon Materials [J].

Tang, Kai ;

Ovrelid, Eivind J. ;

Tranell, Gabriella ;

Tangstad, Merete .

MATERIALS TRANSACTIONS, 2009, 50 (08) :1978-1984

[10] CONCENTRATION, SOLUBILITY, AND EQUILIBRIUM DISTRIBUTION COEFFICIENT OF NITROGEN AND OXYGEN IN SEMICONDUCTOR SILICON [J].

YATSURUGI, Y ;

AKIYAMA, N ;

ENDO, Y ;

NOZAKI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (07) :975-979

← 1 2 →