Temperature Dependence of the Solubility of Nitrogen in Liquid Silicon Equilibrated with Silicon Nitride

被引：10
作者：
Dalaker, Halvor [1 ]
Tangstad, Merete [1 ]
机构：
[1] Norwegian Univ Sci & Technol, Dept Mat Sci & Engn, N-7491 Trondheim, Norway
来源：
MATERIALS TRANSACTIONS | 2009年 / 50卷 / 11期
关键词：
silicon; nitrogen; solubility; thermodynamics; OXYGEN;
D O I：
10.2320/matertrans.M2009164
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The solubility of nitrogen in liquid silicon equilibrated with silicon nitride and its dependence on the composition of the atmosphere has been studied in the temperature region 1428-1542 degrees C. High purity silicon was melted in silicon nitride crucibles under Ar and N-2 atmospheres. The equilibrium was observed to be established within minutes, after which no evolution of the nitrogen content with time could be observed. The nitrogen transfer between the Si3N4-crucible and the melt was faster than the transfer via the gas-phase to such an extent that the composition of the atmosphere did not influence the solubility limit. The solubility limit as a function of temperature was found to follow: C-N(T, C-B) = 7957.9 * exp(-24376/T) At the melting point of silicon, this equation gives the solubility of nitrogen as 42 ppm mass. From this equation, a thermodynamic derivation led to the following expression for the dissolution energy of nitrogen: Delta G(0) = -1.63 * 10(4) + 26T [doi: 10.2320/matertrans.M2009164]
引用
收藏
页码：2541 / 2544
页数：4
相关论文
共 11 条
  • [1] Effect of nitrogen contamination by crucible encapsulation on polycrystalline silicon material quality
    Binetti, S
    Acciarri, M
    Savigni, C
    Brianza, A
    Pizzini, S
    Musinu, A
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 36 (1-3): : 68 - 72
  • [2] KUBASCHEWSKI O, 1979, METALLURGICAL THERMO, P383
  • [3] NITROGEN SOLUBILITY IN LIQUID SILICON
    NARUSHIMA, T
    UEDA, N
    TAKEUCHI, M
    ISHII, F
    IGUCHI, Y
    [J]. MATERIALS TRANSACTIONS JIM, 1994, 35 (11): : 821 - 826
  • [4] OXYGEN SOLUBILITY IN LIQUID SILICON
    NARUSHIMA, T
    MATSUZAWA, K
    MUKAI, Y
    IGUCHI, Y
    [J]. MATERIALS TRANSACTIONS JIM, 1994, 35 (08): : 522 - 528
  • [5] RAKOTONIAINA JP, 2005, P 20 EUR PHOT SOL EN, P773
  • [6] RYNINGEN B, 2007, P 22 EUR PHOT SOL EN, P1086
  • [7] SOPORI B, 2005, MATER RES SOC S P, P864
  • [8] Tanahashi M, 1998, SHIGENTO SOZAI, V114, P807
  • [9] A Thermochemical Database for the Solar Cell Silicon Materials
    Tang, Kai
    Ovrelid, Eivind J.
    Tranell, Gabriella
    Tangstad, Merete
    [J]. MATERIALS TRANSACTIONS, 2009, 50 (08) : 1978 - 1984
  • [10] CONCENTRATION, SOLUBILITY, AND EQUILIBRIUM DISTRIBUTION COEFFICIENT OF NITROGEN AND OXYGEN IN SEMICONDUCTOR SILICON
    YATSURUGI, Y
    AKIYAMA, N
    ENDO, Y
    NOZAKI, T
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (07) : 975 - 979
12