Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N2 remote-plasma treatment

被引：5

作者：

Huang, P. ^{[1
]}

Luc, Q. H. ^{[2
]}

Sibaja-Hernandez, A. ^{[3
]}

Hsu, C. W. ^{[2
]}

Wu, J. Y. ^{[1
]}

Ko, H. L. ^{[1
]}

Tran, N. A. ^{[2
]}

Collaert, N. ^{[3
]}

Chang, E. Y. ^{[1
,2
,4
]}

机构：

[1] Natl Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

[3] IMEC, B-3001 Leuven, Belgium

[4] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

来源：

AIP ADVANCES | 2021年 / 11卷 / 01期

关键词：

MOBILITY; INGAAS; EXTRACTION; PASSIVATION; AL2O3;

D O I：

10.1063/5.0037378

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, we demonstrated considerable enhancement of the transport characteristics of n-type Al2O3/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (n-MOSFETs) with the assistance of in situ NH3/N-2 remote-plasma (RP) treatment. According to the measurement and simulation results, the RP treated sample shows superior device performances as compared to the control sample without plasma treatment including (a) improved on-current (I-on) from 8.5 mA/mm to 17 mA/mm, (b) improved transconductance (G(m)) from 16.05 mS/mm to 28.52 mS/mm, (c) suppressed subthreshold swing from 189 mV/dec to 170 mV/dec, (d) suppressed drain induced barrier lowering from 36 mV/V to 28 mV/V, (e) intensified peak effective mobility (mu (eff)) from 1896 cm(2) V-1 s(-1) to 2956 cm(2) V-1 s(-1), and (f) reduced acceptor-type density of interface trap state (D-it,D-A) to 44%. By using TCAD simulation, device output performance is found to be dramatically impacted by the trap state (especially acceptor-type) at the Al2O3/InGaAs interface.

引用

页数：8

共 40 条

[21] Interface Engineering for InGaAs n-MOSFET Application Using Plasma PH3-N2 Passivation [J].