Multiple levels in intermediate band solar cells

被引：32
作者：
Luque, Antonio [1 ]
Linares, Pablo G. [1 ]
Antolin, Elisa [1 ]
Canovas, Enrique [1 ]
Farmer, Corrie D. [2 ]
Stanley, Colin R. [2 ]
Marti, Antonio [1 ]
机构：
[1] Univ Politecn Madrid, Inst Energia Solar, E-28040 Madrid, Spain
[2] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8QQ, Lanark, Scotland
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 01期
关键词：
conduction bands; current density; dark conductivity; gallium arsenide; III-V semiconductors; quantum dots; solar cells; valence bands;
D O I：
10.1063/1.3280387
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The presence of multiple energy levels in the intermediate band solar cell (IBSC) is studied by detailed balance calculations under ideal conditions. Multiple levels are found experimentally in IBSCs made with quantum dots (QDs) which act to reduce the limiting efficiency determined from detailed balance calculations. J(L)-V(OC) measurements up to 1000 suns on IBSCs are presented together with their fitting to modified detailed balance calculations. It is found that the introduction of the QDs degrades the performance of the host cell but the sub-bandgap cell operates close to ideality.
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页数：3
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  • [1] AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs
    Blokhin, S. A.
    Sakharov, A. V.
    Nadtochy, A. M.
    Pauysov, A. S.
    Maximov, M. V.
    Ledentsov, N. N.
    Kovsh, A. R.
    Mikhrin, S. S.
    Lantratov, V. M.
    Mintairov, S. A.
    Kaluzhniy, N. A.
    Shvarts, M. Z.
    [J]. SEMICONDUCTORS, 2009, 43 (04) : 514 - 518
  • [2] Application of the photoreflectance technique to the characterization of quantum dot intermediate band materials for solar cells
    Canovas, E.
    Marti, A.
    Lopez, N.
    Antolin, E.
    Linares, P. G.
    Farmer, C. D.
    Stanley, C. R.
    Luque, A.
    [J]. THIN SOLID FILMS, 2008, 516 (20) : 6943 - 6947
  • [3] Effect of strain compensation on quantum dot enhanced GaAs solar cells
    Hubbard, S. M.
    Cress, C. D.
    Bailey, C. G.
    Raffaelle, R. P.
    Bailey, S. G.
    Wilt, D. M.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (12)
  • [4] Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels
    Luque, A
    Marti, A
    [J]. PHYSICAL REVIEW LETTERS, 1997, 78 (26) : 5014 - 5017
  • [5] General equivalent circuit for intermediate band devices:: Potentials, currents and electroluminescence
    Luque, A
    Martí, A
    Stanley, C
    López, N
    Cuadra, L
    Zhou, D
    Pearson, JL
    McKee, A
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) : 903 - 909
  • [6] The Intermediate Band Solar Cell: Progress Toward the Realization of an Attractive Concept
    Luque, Antonio
    Marti, Antonio
    [J]. ADVANCED MATERIALS, 2010, 22 (02) : 160 - 174
  • [7] Production of photocurrent due to intermediate-to-conduction-band transitions:: A demonstration of a key operating principle of the intermediate-band solar cell
    Marti, A.
    Antolin, E.
    Stanley, C. R.
    Farmer, C. D.
    Lopez, N.
    Diaz, P.
    Canovas, E.
    Linares, P. G.
    Luque, A.
    [J]. PHYSICAL REVIEW LETTERS, 2006, 97 (24)
  • [8] Theoretical and experimental examination of the intermediate-band concept for strain-balanced (In,Ga)As/Ga(As,P) quantum dot solar cells
    Popescu, Voicu
    Bester, Gabriel
    Hanna, Mark C.
    Norman, Andrew G.
    Zunger, Alex
    [J]. PHYSICAL REVIEW B, 2008, 78 (20)
  • [9] PHOTON-RADIATIVE RECOMBINATION OF ELECTRONS AND HOLES IN GERMANIUM
    VANROOSBROECK, W
    SHOCKLEY, W
    [J]. PHYSICAL REVIEW, 1954, 94 (06): : 1558 - 1560
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