Photoreflectance spectroscopy of semiconductor structures at hydrostatic pressure: A comparison of GaInAs/GaAs and GaInNAs/GaAs single quantum wells

被引：27

作者：

Kudrawiec, R. ^{[1
]}

Misiewicz, J. ^{[1
]}

机构：

[1] Wroclaw Tech Univ, Inst Phys, PL-50370 Wroclaw, Poland

来源：

APPLIED SURFACE SCIENCE | 2006年 / 253卷 / 01期

关键词：

photoreflectance; SQW; hydrostatic pressure; dilute nitrides;

D O I：

10.1016/j.apsusc.2006.05.073

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The pressure dependence of optical transitions in Ga0.64In0.36As/GaAs and Ga0.64In0.36N0.0As0.99/GaAs single quantum well (SQW) structures were studied in photoreflectance (PR) spectroscopy. In order to apply high hydrostatic pressure, up to similar to 11 kbar, the liquid-filled clamp-pressure cell with a sapphire window for optical access has been adopted in the PR set-up with the so called 'bright configuration'. It has been found that the linear hydrostatic pressure coefficient for the ground state transition are equal to 8.6 and 7.3 meV/kbar for the GaInAs/GaAs and GaInNAs/GaAs SQWs, respectively. This result shows that the incorporation of only 1% of N atoms into GaInAs/GaAs leads to similar to 15% decrease in the pressure coefficient. In addition, a non-linearity in the pressure dependence of the ground state transition has been resolved for the GaInNAs/GaAs SQW. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：80 / 84

页数：5

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