Reliability study of power RF LDMOS device under thermal stress

被引：24

作者：

Belaid, M. A. ^{[1
]}

Ketata, K. ^{[1
]}

Mourgues, K. ^{[1
]}

Gares, M. ^{[1
]}

Masmoudi, M. ^{[1
]}

Marcon, J. ^{[1
]}

机构：

[1] Univ Rouen, IUT Rouen, LEMI, F-76821 Mont St Aignan, France

来源：

MICROELECTRONICS JOURNAL | 2007年 / 38卷 / 02期

关键词：

simulation; hot carrier effects; LDMOS; thermal stress; HOT-CARRIER DEGRADATION; TRANSISTOR;

D O I：

10.1016/j.mejo.2006.08.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the results of comparative reliability study of two accelerated ageing tests for thermal stress applied to power RF LDMOS: Thermal Shock Tests (TST, air-air test) and Thermal Cycling Tests (TCT, air-air test) under various conditions (with and without DC bias, TST cold and hot, different extremes temperatures AT). The investigation findings of electrical parameter degradations after various ageing tests are discussed. On-state resistance (Rds-on) is reduced by 12% and feedback capacitance (C-rss) by 24%. This means that the tracking of these parameters enables to consider the hot carrier injection as dominant degradation phenomenon. To reach a better understanding of the physical mechanisms of parameter's shift after thermal stress, a numerical device model (2D, Silvaco-Atlas) was used to confirm degradation phenomena. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：164 / 170

页数：7

共 19 条

[1]

Belaïd MA, 2005, SISPAD: 2005 International Conference on Simulation of Semiconductor Processes and Devices, P231

[2] Comparative analysis of accelerated ageing effects on power RF LDMOS reliability [J].