Radiation Sensor Compatible With Standard CMOS Technology

被引：12

作者：

Garcia Moreno, E. ^{[1
]}

Picos, R. ^{[1
]}

Isern, E. ^{[1
]}

Roca, M. ^{[1
]}

Bota, S. ^{[1
]}

Suenaga, K. ^{[1
]}

机构：

[1] Univ Balearic Isl, ES-07122 Palma De Mallorca, Spain

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2009年 / 56卷 / 05期

关键词：

Gamma dosimeter; MOSFET sensors; radiation effects; DOSIMETRY; MOSFET;

D O I：

10.1109/TNS.2008.2011804

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a gamma radiation dosimeter built in a standard 0.35 mu m CMOS technology. The dosimeter, which occupies 300 x 150 mu m x mu m of silicon area, gives a digital output signal of frequency proportional to the total dose. Experimental results up to 1.5 Mrads are presented. Measured low dose radiation responsivity is 84.7 Hz/Krad and sensitivity to temperature and supply voltage are 1.43 kHz/degrees C and 20.9 kHz/V, respectively.

引用

页码：2910 / 2915

页数：6

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