Condensation process and physical properties of GeSe(In, Cd) thin films prepared by semi-closed space technique

The effect of alloying Ge0.28Se0.72 with 5 wt.% of either indium (In) or cadmium (Cd) elements, have been investigated. Films prepared by semi-closed space (SCS) technique, from their bulk state, have been obtained. The condensation processes as a function of substrate temperature has been discussed. DC electrical conductivity, photocurrent-time action, optical absorbance spectra and X-ray diffraction pattern investigations revealed that the photocurrent has increased while the bandgap of the final structure has lowered from that of GeSe to that of GeSe-InSe and/or GeSe-CdSe. (C) 2002 Elsevier Science B.V. All rights reserved.