Aspects of radiation hardness for silicon microstrip detectors

被引：2
作者：
Wheadon, R
机构：
[1] INFN Pisa, Via Livornese 1291, S. Piero a Grado, Pisa
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1997年 / 386卷 / 01期
关键词：
D O I：
10.1016/S0168-9002(96)01109-6
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The ways in which radiation damage affects the properties of silicon microstrip detectors are reviewed and discussed in the context of inner tracking or vertexing requirements for the LHC experiments.
引用
收藏
页码：143 / 148
页数：6
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