Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering

被引:7
作者
Choi, Won-Young [1 ]
Bang, Hyun-Woo [1 ]
Chun, Seung-Hyun [2 ]
Lee, Sunghun [2 ]
Jung, Myung-Hwa [1 ]
机构
[1] Sogang Univ, Dept Phys, Seoul 04107, South Korea
[2] Sejong Univ, Dept Phys, Seoul 05006, South Korea
来源
NANOSCALE RESEARCH LETTERS | 2021年 / 16卷 / 01期
基金
新加坡国家研究基金会;
关键词
MnSi; Sputtering; Polycrystal; Skyrmion; Topological Hall effect;
D O I
10.1186/s11671-020-03462-2
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Topologically protected chiral skyrmions are an intriguing spin texture that has attracted much attention because of fundamental research and future spintronic applications. MnSi with a non-centrosymmetric structure is a well-known material hosting a skyrmion phase. To date, the preparation of MnSi crystals has been investigated by using special instruments with an ultrahigh vacuum chamber. Here, we introduce a facile way to grow MnSi films on a sapphire substrate using a relatively low vacuum environment of conventional magnetron sputtering. Although the as-grown MnSi films have a polycrystalline nature, a stable skyrmion phase in a broad range of temperatures and magnetic fields is observed via magnetotransport properties including phenomenological scaling analysis of the Hall resistivity contribution. Our findings provide not only a general way to prepare the materials possessing skyrmion phases but also insight into further research to stimulate more degrees of freedom in our inquisitiveness.
引用
收藏
页数:7
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