Shubnikov-de Haas effect in n-CdSb:In under pressure

Magnetoresistance (MR) of single crystals of the group II-V semiconductor n-CdSb doped with In is investigated in magnetic fields B up to 7 T and temperatures T between 1.2 and 2.4 K under hydrostatic pressure p = 0-10 kbar. Shubnikov-de Haas (SdH) oscillations of MR observed up to B similar to 4 T are characterized by a single period, giving evidence for one participating group of conduction band electrons. Pressure dependence of the SdH period and concentration reveal a second group of charge carriers, connected to a resonance impurity band with delocalized states. The SdH amplitude, A, exhibits non-universal behavior attributable to its sensitivity to scattering mechanism at low quantum numbers. The parameters characterizing the non-universality of A( T) and the pressure dependence of the cyclotron effective mass, m(c)(p), and of the concentration of conduction electrons, n(SdH), are given. The dependences of m(c) and the Fermi energy on pressure are consistent with Kane-type non-parabolicity of the conduction band.