In situ monitoring of the growth of Cu(In,Ga)Se2 thin films

被引：11

作者：

Chityuttakan, Chanwit ^{[1
]}

Chinvetkitvanich, Panita ^{[1
]}

Yoodee, Kajornyod ^{[1
]}

Chatraphorn, Somphong ^{[1
]}

机构：

[1] Chulalongkorn Univ, Fac Sci, Semicond Phys Res Lab, Bangkok 10330, Thailand

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2006年 / 90卷 / 18-19期

关键词：

in situ monitoring; EPD; two-stage process; CIGS; thin film solar cells; devices;

D O I：

10.1016/j.solmat.2006.06.038

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Thin films of Cu(In,Ga)Se-2 were grown by co-evaporation process in a conventional vacuum coating system at the base pressure of 10(-5) mbar. The controllable of the two-stage growth process was developed. During the growth process, substrate temperature, graphite heater temperature, heating output power and temperature of the CIGS surface were monitored simultaneously. In this setup, we use the change in the thermal behavior of the substrate due to the variations in emissivity of CIGS film during the transition of Cu-rich to Cu-poor in the second stage corresponding to the change of power fed into the substrate heater as the control signal. By observing the variation of control signals, the desired final composition of the film can be obtained. Using our device fabrication, Al/ZnO(Al)/CdS/CIGS/Mo/SLG solar cells with efficiency over 14% (without AR) were achieved. (c) 2006 Elsevier B.v. All rights reserved.

引用

页码：3124 / 3129

页数：6

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