Performance requirements for power MOSFET models

被引：34

作者：

Budihardjo, IK ^{[1
]}

Lauritzen, PO ^{[1
]}

Mantooth, HA ^{[1
]}

机构：

[1] ANAL INC,BEAVERTON,OR 97075

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 1997年 / 12卷 / 01期

关键词：

D O I：

10.1109/63.554167

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The power MOSFET model performance required For accurate waveform simulation is evaluated for most converter circuits, Three models are thoroughly evaluated through CV plots, gate charge plots, and converter data. A procedure is given for evaluating any proprietary model using data book information with three simple simulations.

引用

页码：36 / 45

页数：10

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