Direct evidence of a buried homojunction in Cu(In,Ga)Se2 solar cells

被引：108

作者：

Jiang, CS ^{[1
]}

Hasoon, FS ^{[1
]}

Moutinho, HR ^{[1
]}

Al-Thani, HA ^{[1
]}

Romero, MJ ^{[1
]}

Al-Jassim, MM ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 01期

关键词：

D O I：

10.1063/1.1534417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The built-in electrical potential of Cu(In,Ga)Se-2 (CIGS) solar cells was measured quantitatively and resolved spatially using scanning Kelvin probe microscopy. Profiles of the electrical potential along cross sections of the device demonstrate that the p-n junction is a buried homojunction, and the p/n boundary is located 30-80 nm from the CIGS/CdS interface in the CIGS film. The built-in electric field terminates at the CIGS/CdS interface, indicating that the CdS and ZnO layers of the device structure are inactive for the collection of photoexcited carriers. (C) 2003 American Institute of Physics.

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页码：127 / 129

页数：3

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