Single-walled carbon nanotube mixers

被引：1

作者：

Rabieirad, Laleh ^{[1
]}

Mohammadi, Saeed ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5 | 2006年

关键词：

carbon nanotube; convergence gain; metallic nanotube; mixer; nanotechnology; poly-silicon; single walled;

D O I：

10.1109/MWSYM.2006.249859

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report fabrication and experimental characterization of metallic single-walled carbon nanotube (SWNT) mixers. Metallic nanotubes attached to gate dielectric (SiO2) and suspended nanotubes were fabricated over Poly-Si gate structures. Devices were characterized for their RF mixing performance up to 80MHz. Under identical input signals, the suspended nanotube mixers had about 8 to 13dB higher convergence gain than the devices attached to the gate dielectric. The advantages of using patterned Poly-Si gate for RF mixers are low parasitic capacitance from the pad to SWNT contacts, and compatibility of Poly-Si gate material with subsequent high temperature growth of SWNTs.

引用

页码：2055 / +

页数：2