Analysis of factors contributing to common-base avalanche instabilities in advanced SiGeHBTs

被引：0

作者：

Grens, Curtis M. ^{[1
]}

Cressler, John D. ^{[1
]}

Joseph, Alvin J. ^{[2
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, 85 5th St,NW, Atlanta, GA 30308 USA

[2] IBM Microelect, Essex Jct, VT 05452 USA

来源：

PROCEEDINGS OF THE 2006 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2006年

关键词：

avalanche breakdown; bipolar transistors; electric variables measurement; impact ionization; safe-operating-area; SiGeHBT BiCMOS technology;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Factors contributing to the observed bias-dependent features in common-base (CB) dc instability characteristics are examined for advanced SiGe HBTs. Parameters relevant to CB instabilities are identified and extracted from data to yield improved physical insight, a straightforward estimation methodology, and simple comparison between samples.

引用

页码：29 / +

页数：2

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