Non-Gaussian conductance noise in disordered electronic systems (vol 5, pg 809, 2008)

被引:0
|
作者
Orlyanchik, V. [1 ]
Kozub, V. I. [1 ]
Ovadyahu, Z. [1 ]
机构
[1] Hebrew Univ Jerusalem, IL-91904 Jerusalem, Israel
来源
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 6 | 2009年 / 6卷 / 06期
关键词
D O I
10.1002/pssc.200980990
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The results of conductance-noise experiments on disordered films of crystalline indium oxide in their glassy phase are discussed. The power-spectrum of the noise has the usual i/f form, and when measured under small bias, the noise is Gaussian even in samples as small as 2 mu m. However at larger voltages V used in the conductance measurements the noise may acquire non-Gaussian features with a non-trivial dependence on V. Theoretical model relating this behavior to a non-linear effect inherent to electronic transport in a hopping system is presented. It is concluded that the non-Gaussian features can be observed whether or not the system is glassy.
引用
收藏
页码:1521 / 1521
页数:1
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