Fabrication of Ti/TiOx tunneling barriers by tapping mode atomic force microscopy induced local oxidation

被引:72
作者
Irmer, B
Kehrle, M
Lorenz, H
Kotthaus, JP
机构
[1] Sektion Physik, Ludwig-Maximilians Univ. Munchen, München
关键词
D O I
10.1063/1.120019
中图分类号
O59 [应用物理学];
学科分类号
摘要
We use an atomic-force microscope operating in a dynamic modus, commonly called tapping mode, to completely oxidise through thin 5 nm titanium films using the very local electric field between the tip and the sample. Tapping mode local oxidation minimizes tip degradation and therefore enhances resolution and reliability. By working under a controllable environment and measuring the resistance in situ while oxidising we are able to fabricate well-defined isolating Ti-TiOx-Ti barriers as small as 15 nm. Their conductance shows an exponential dependence on the oxide width, thereby identifying tunneling as the dominant conduction mechanism. From the nonlinear current-voltage characteristic a tunneling barrier height of 178 meV is derived. (C) 1997 American Institute of Physics.
引用
收藏
页码:1733 / 1735
页数:3
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