Semiconductor to metal transition characteristics of VO2 thin films grown epitaxially on Si (001)

被引：73

作者：

Gupta, A. ^{[1
]}

Aggarwal, R. ^{[1
]}

Gupta, P. ^{[1
]}

Dutta, T. ^{[1
]}

Narayan, Roger J. ^{[1
,2
]}

Narayan, J. ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[2] Univ N Carolina, Joint Dept Biomed Engn, Chapel Hill, NC 27599 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 11期

基金：

美国国家科学基金会;

关键词：

INSULATOR-TRANSITION; PHASE-TRANSITION;

D O I：

10.1063/1.3232241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report semiconductor to metal transition (SMT) characteristics of vanadium dioxide (VO2) grown epitaxially on Si (001) at 500 degrees C. The epitaxial integration with Si (001) was achieved by using epitaxial tetragonal yttria-stabilized zirconia (YSZ) as an intermediate buffer layer, which was grown in situ. From x-ray (theta-2 theta and phi-scan) and electron diffraction studies, we established that VO2 and YSZ grow in (020) and (001) orientations, respectively, on Si (001) substrate and epitaxial relationship was established to be "VO2[001] or VO2[100]"//YSZ[110]//Si [100] and VO2 (010)//YSZ(001)//Si (001). VO2/YSZ/Si(001) heterostructures showed approximately three orders of magnitude reversible change in resistivity and hysteresis of similar to 6 K upon traversing the transition temperature. A 10 degrees C increase in the SMT temperature of these VO2 films, compared to the value reported for bulk VO2, has been explained on the basis of uniaxial stress along the c-axis, which can stabilize the covalent monoclinic phase up to higher temperatures. A correlation between in-plane orientations of the film and the transition width has also been suggested, which is consistent with our previously published thermodynamic model. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3232241]

引用

页数：3

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