Multi-quantum well design parameter variation in InP-based VCSEL

被引：0

作者：

Kumarajah, K. ^{[1
]}

Menon, P. S. ^{[2
]}

Ismail, M. ^{[1
]}

Yeop, B. Y. ^{[2
]}

Shaari, S. ^{[2
]}

机构：

[1] Univ Kebangsaan Malaysia, Fac Engn & Built Environm, Dept Elect Elect & Syst Engn, Ukm Bangi 43600, Selangor, Malaysia

[2] Univ Kebangsaan Malaysia, Inst Microengn & Nanoelect, Ukm Bangi 43600, Selangor, Malaysia

来源：

MINO'09: PROCEEDINGS OF THE 8TH WSEAS INTERNATIONAL CONFERENCE ON MICROELECTRONICS, NANOELECTRONICS, OPTOELECTRONICS: ADVANCES IN MICROELECTRONICS, NANOELECTRONICS AND OPTOELECTRONICS | 2009年

关键词：

VCSEL; MQW; InGaAsP; threshold current; gain; air-post; SURFACE-EMITTING LASERS; VERTICAL-CAVITY LASERS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the design parameter variations of multi quantum wells (MQW) in the active region of an InP-based vertical-cavity surface emitting laser (VCSEL) utilizing an air-post design, The MQW and barrier thickness were varied and their effect on the device threshold current, gain and lattice temperature were analysed and presented.

引用

页码：115 / +

页数：2

共 9 条

[1] Design and analysis of double-fused 1.55-mu m vertical-cavity lasers [J].