Quantum dot cosensitized solar cell based on PMOT@CdSe@ZnO core shell nanostructures with dual emission

被引:3
作者
Sehgal, Preeti [1 ]
Narula, Anudeep Kumar [1 ]
机构
[1] Guru Gobind Singh Indraprastha Univ, Univ Sch Basic & Appl Sci, Delhi 110078, India
关键词
Core/Shell nanomaterials; Poly(3-methoxy thiophene); Interfacial charge recombination; Photosensitizers; Photovoltaic; Recombination; NANOROD ARRAYS; PERFORMANCE; FABRICATION;
D O I
10.1016/j.jssc.2015.11.013
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Quantum dot sensitized solar cell based on poly(3-methoxythiophene) (PMOT)@CdSe@ZnO core shell nanostructure were synthesized where PMOT serves as hole transport material, CdSe acts as a photo sensitizer which enhances visible range absorption and also helps in injection of electrons from PMOT to ZnO where ZnO provides channel for efficient electron transport. The properties of the device were assessed with and without CdSe quantum dots and effect of annealing was also observed on the device. After the addition of CdSe QDs, the visible light absorption of PMOT@ZnO was enhanced due to increase in surface area. PMOT@CdSe@ZnO exhibited dual emission, where CdSe and ZnO exhibited visible and UV emission respectively. The interface formed between PMOT and CdSe improves the charge separation. The better photovoltaic measurement of PMOT@CdSe@ZnO over CdSe@ZnO indicates that PMOT efficiently dissociate excitons at interface and suppress the interfacial charge recombination. A power conversion efficiency of 0.989% was attained for the device PMOT@CdSe@ZnO with V-oc=0.56 V and J(sc)=2.5 mA/cm(2). Upon annealing, the efficiency of the device was enhanced to 1.1609% with V-oc=0.58, J(sc)=3.2 mA/cm(2). (C) 2015 Elsevier Inc. All rights reserved.
引用
收藏
页码:428 / 437
页数:10
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