Layer-selective lift-off processing in a TCO/Si thin film system by ultra-short (ps, fs) laser pulses

被引：0
|
作者：
Krause, Stephan [1 ,2 ]
Miclea, Paul-Tiberiu [2 ,5 ]
Seifert, Gerhard [3 ,4 ]
Hagendorf, Christian [2 ]
机构：
[1] Hsch Anhalt Univ Appl Sci, Bernburger Str 55, D-06366 Kothen, Germany
[2] Fraunhofer Ctr Silicon Photovolta CSP, Otto Eissfeldt Str 12, D-06120 Halle, Germany
[3] Fraunhofer Ctr High Temp Mat & Design HTL, Gottlieb Keim Str 62, D-95448 Bayreuth, Germany
[4] Martin Luther Univ Halle Wittenberg, Ctr Innovat Competence SiLi Nano, Karl Freiherr von Fritsch Str 3, D-06120 Halle, Germany
[5] Martin Luther Univ Halle Wittenberg, Inst Phys, Heinrich Damerow Str 4, D-06120 Halle, Saale, Germany
来源：
2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2016年
关键词：
Laser lift-off; femtosecond laser pulses; transparent conductive oxide; thin film photovoltaics; RAMAN-SPECTROSCOPY; SI; ABLATION;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Narrow craters and trenches have been scribed into Si/TCO thin film systems on glass by selective laser lift-off using nano-,pico- and femtosecond pulses of similar to 0.5 mu m wavelength. A high-resolution microstructural material investigation shows a significant reduction of HAZ (heat affected zone) by changing from ns to ps and fs pulse durations. Thus, ablation efficiency and selectivity of ps- and fs-lift-off thin film processing in comparison to thermal ablation by ns pulses is strongly increased. This allows reducing the total scribe region (optically inactive zone) to widths below 50 mu m and minimized structural modifications on TCO/glass substrate regarding to laser interaction processes.
引用
收藏
页码：3057 / 3061
页数：5
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