An Amorphous Indium-Gallium-Zinc-Oxide Active Matrix Electroluminescent Pixel

被引：15

作者：

Wellenius, Patrick ^{[1
]}

Suresh, Arun ^{[1
]}

Luo, Haojun ^{[1
]}

Lunardi, Leda M. ^{[1
]}

Muth, John F. ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

来源：

JOURNAL OF DISPLAY TECHNOLOGY | 2009年 / 5卷 / 12期

基金：

美国国家科学基金会;

关键词：

Amorphous semiconductors (AOS); electroluminescent (EL) devices; flat panel displays; thin-film transistors (TFTs); THIN-FILM TRANSISTORS; SEMICONDUCTORS; TRANSPARENT; MOBILITY; CIRCUIT;

D O I：

10.1109/JDT.2009.2024012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, an active matrix pixel was fabricated and characterized using indium gallium zinc oxide (IGZO) thin-film transistors and a novel electroluminescent (EL) Eu:IGZO thin-film phosphor. The results show that even large and unoptimized IGZO devices are capable of modulating at the frequencies necessary for modern display technology. Furthermore, we demonstrate a rare-earth doped amorphous-oxide semiconductor (AOS) EL phosphor that can be modulated via a TFT.

引用

页码：438 / 445

页数：8

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