Design and characterization of a 6-18 GHz GaN on SiC high-power amplifier MMIC for electronic warfare

被引:1
|
作者
Oreja Gigorro, Eduardo [1 ]
Delgado Pascual, Emilio [1 ]
Sanchez Martinez, Juan Jose [1 ]
Gil Heras, Maria Luz [1 ]
Bueno Fernandez, Virginia [1 ]
Bodalo Marquez, Antonio [1 ]
Grajal, Jesus [2 ]
机构
[1] Indra Sistemas SA, Ctra Loeches 9, Torrejon De Ardoz 28850, Spain
[2] Univ Politecn Madrid, Informat Proc & Telecommun Ctr, Av Complutense 30, E-28040 Madrid, Spain
关键词
Broadband amplifiers; high power amplifiers; microwave amplifiers; MMICs;
D O I
10.1017/S1759078719000503
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 6-18 GHz high-power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two-stage corporate amplifier with two and four transistors, respectively. It has been fabricated on UMS using their 0.25 mu m gate length process, GH25. A study of the suitable attachment method and measurement on wafer and on jig are detailed. This HPA exhibits an averaged output power of 39.2 dBm with a mean gain of 11 dB in saturation and a 24.5% maximum power added efficiency in pulse mode operation with a duty cycle of 10% with a 25 mu s pulse width.
引用
收藏
页码:625 / 634
页数:10
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