Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

被引：12

作者：

Lai, K. Y. ^{[1
]}

Paskova, T. ^{[2
,3
]}

Wheeler, V. D. ^{[2
]}

Grenko, J. A. ^{[2
]}

Johnson, M. A. L. ^{[2
]}

Barlage, D. W. ^{[1
]}

Udwary, K. ^{[3
]}

Preble, E. A. ^{[3
]}

Evans, K. R. ^{[3
]}

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[3] Kyma Technol Inc, Raleigh, NC 27617 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 11期

关键词：

cathodoluminescence; gallium compounds; III-V semiconductors; indium compounds; quantum confined Stark effect; semiconductor quantum wells; spectral line intensity; spectral line shift; wide band gap semiconductors; LIGHT-EMITTING-DIODES;

D O I：

10.1063/1.3264729

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN/GaN quantum wells (QWs) grown with identical conditions on m-plane and c-plane GaN substrates were studied by cathodoluminescence spectroscopy. At a low current of 10 nA, the emission intensity and wavelength of the m-plane aligned QWs were found to be about two times stronger and 19.5 nm blueshifted with respect to that of the c-plane aligned QWs. An increase in the current over three orders of magnitude was found to result in an increase in the emission intensities, with faster saturation in the m-plane aligned QWs. This was explained by the screening of quantum-confined Stark effect in the emission efficiency of the c-plane aligned QWs.

引用

页数：4

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