Accelerated aging test for gate-oxide degradation in SiC MOSFETs for condition monitoring

被引:18
作者
Hayashi, Shin-Ichiro [1 ]
Wada, Keiji [1 ]
机构
[1] Tokyo Metropolitan Univ, Tokyo, Japan
基金
日本学术振兴会;
关键词
SiC MOSFET; Gate oxide; HTGB; Condition monitoring; Reliability; BIAS TEMPERATURE INSTABILITY; POWER; RELIABILITY;
D O I
10.1016/j.microrel.2020.113777
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a method for the condition monitoring of the gate-oxide degradation in silicon carbide (SiC) metal-oxide-semiconductor-field-effect transistors (MOSFETs) is presented. To identify the gate-oxide degradation in SiC MOSFETs, a high-temperature gate bias (HTGB) test, which is an accelerated aging test, is usually performed. This paper proposes an advanced HTGB test for power devices. The test is suitable for developing a condition monitoring system for power devices because the test can accelerate the device aging under switching conditions. Electrical parameter changes in the SiC MOSFETs are demonstrated in the test results. Furthermore, a condition monitoring technique using the input capacitance C-iss change of the SiC MOSFETs is proposed.
引用
收藏
页数:6
相关论文
共 18 条
[1]  
Aichinger T., 2018, IEEE APPL POW EL C 2
[2]  
[Anonymous], 2011, 6074923 IEC
[3]  
Baliga B. J, 2019, Wide Bandgap Semiconductor Power Devices: Materials. Physics, Design, V2nd
[4]  
Erturk F, 2017, APPL POWER ELECT CO, P3576, DOI 10.1109/APEC.2017.7931211
[5]   High temperature pulsed-gate robustness testing of SiC power MOSFETs [J].
Fayyaz, A. ;
Castellazzi, A. .
MICROELECTRONICS RELIABILITY, 2015, 55 (9-10) :1724-1728
[6]  
Gajewski D., 2020, IEEE APPL POW EL C 2
[7]   Bias temperature instability and condition monitoring in SiC power MOSFETs [J].
Gonzalez, J. Ortiz ;
Alatise, O. .
MICROELECTRONICS RELIABILITY, 2018, 88-90 :557-562
[8]   Time-Dependent Dielectric Breakdown of 4H-SiC/SiO2 MOS Capacitors [J].
Gurfinkel, Moshe ;
Horst, Justin C. ;
Suehle, John S. ;
Bernstein, Joseph B. ;
Shapira, Yoram ;
Matocha, Kevin S. ;
Dunne, Greg ;
Beaupre, Richard A. .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2008, 8 (04) :635-641
[9]   A Condition-Monitoring Method of DC-Link Capacitors Used in a High-Power Three-Phase PWM Inverter with an Evaluation Circuit [J].
Hasegawa, Kazunori ;
Nishizawa, Shin-ichi ;
Omura, Ichiro .
IEEJ JOURNAL OF INDUSTRY APPLICATIONS, 2019, 8 (03) :480-487
[10]   Online Degradation Detection/Prediction Method for Current Transfer Ratio of Photo-Coupler Installed in Digitally-Controlled Switching Mode Power Supply [J].
Nakao, Hiroshi ;
Yonezawa, Yu ;
Sugawara, Takahiko ;
Nakashima, Yoshiyasu ;
Kurokawa, Fujio .
IEEJ JOURNAL OF INDUSTRY APPLICATIONS, 2018, 7 (05) :403-409