Properties of wide-mesastripe InGaAsP/InP lasers

被引：30

作者：

Golikova, EG ^{[1
]}

Kureshov, VA ^{[1
]}

Leshko, AY ^{[1
]}

Lyutetskii, AV ^{[1
]}

Pikhtin, NA ^{[1
]}

Ryaboshtan, YA ^{[1
]}

Skrynnikov, GA ^{[1
]}

Tarasov, IS ^{[1
]}

Alferov, ZI ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2000年 / 34卷 / 07期

关键词：

D O I：

10.1134/1.1188087

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Wide-mesastripe InGaAsP/InP heterostructure lasers emitting at 1.3-1.5 mu m were grown by metal-organic chemical vapor deposition (MOCVD). Radiation-power-current and spectral characteristics of the lasers have been studied in pulsed and continuous wave (cw) operation in the temperature range of 10-60 degrees C. The temperature of the active region of the diode laser is higher by 30-60 degrees C than that of the copper heatsink upon saturation of the cw output power. The temperature dependence of the differential quantum efficiency strongly affects the cw output power. Output powers of 3 and 2.6 W are achieved in mesastripe lasers in cw operation, and 9 and 6.5 W in pulsed operation, at wavelengths of 1.3 and 1.5 mu m, respectively. (C) 2000 MAIK "Nauka / Interperiodica".

引用

页码：853 / 856

页数：4

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