Superior Switching Characteristics of SiC-MOSFET Embedding SBD

被引：0

作者：

Tominaga, Takaaki ^{[1
]}

Hino, Shiro ^{[1
]}

Mitsui, Yohei ^{[1
]}

Nakashima, Junichi ^{[1
]}

Kawahara, Koutarou ^{[1
]}

Tomohisa, Shingo ^{[1
]}

Miura, Naruhisa ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo, Japan

来源：

2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2019年

关键词：

SiC-MOSFET; SBD; switching characteristics;

D O I：

10.1109/ispsd.2019.8757664

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Superior switching characteristics of SiC-MOSFET embedding SBD is demonstrated compared with conventional MOSFET and MOSFET with external SBD. Inactivation of parasitic body diode by embedding SBD enables a suppression of recovery charge during turn-on process, which results in a reduction of turn-on loss. Furthermore, elimination of external SBD reduces total chip size, or output capacitance charge, which results in a reduction of output capacitance loss.

引用

页码：27 / 30

页数：4