Existence of a stable intermixing phase for monolayer Ge on Si(001)

被引：40
|
作者：
Yeom, HW
Sasaki, M
Suzuki, S
Sato, S
Hosoi, S
Iwabuchi, M
Higashiyama, K
Fukutani, H
Nakamura, M
Abukawa, T
Kono, S
机构：
[1] UNIV TSUKUBA,INST PHYS,TSUKUBA,IBARAKI 305,JAPAN
[2] TOHOKU UNIV,FAC SCI,DEPT PHYS,SENDAI,MIYAGI 98077,JAPAN
来源：
SURFACE SCIENCE | 1997年 / 381卷 / 01期
关键词：
Auger electron diffraction; germanium; growth; low energy electron diffraction (LEED); low index single crystal surfaces; silicon; single crystal epitaxy; x-ray photoelectron spectroscopy;
D O I：
10.1016/S0039-6028(97)00047-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A monolayer adsorption of Ge on a single-domain Si(001)2x1 surface has been investigated by X-ray excited Auger electron diffraction (AED) and scanning tunneling microscopy. Contrary to the common belief, a significant intermixing of Ge down to at least the fourth layer is identified. This intermixing is found to progress to a stable interface alloy phase that develops fully for annealing at 500-600 degrees C. A possible reason for the alloy phase is discussed to be an elastic interaction from the Si(001) surface. (C) 1997 Elsevier Science B.V.
引用
收藏
页码：L533 / L539
页数：7
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