Effect of external fields on the switching current in PZT ferroelectric ceramics

被引：9
|
作者：
Nie, Heng Chang [1 ]
Chen, Xue Feng [1 ]
Feng, Ning Bo [1 ]
Wang, Gen Shui [1 ]
Dong, Xian Lin [1 ]
Gu, Yan [2 ]
He, Hong Liang [2 ]
Liu, Yu Sheng [2 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
[2] Inst Fluid Phys, Natl Key Lab Shock Wave & Detonat Phys, Mianyang 621900, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2010年 / 150卷 / 1-2期
关键词：
Ferroelectrics; Domain switching; DOMAIN REORIENTATION; TITANATE CERAMICS; BARIUM TITANATE; ZIRCONATE; TRANSIENT;
D O I：
10.1016/j.ssc.2009.09.042
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The dependence of a switching current in lead zirconate titanate (PZT) ferroelectric ceramics on the temperature and an applied electrical field was investigated. It was found that temperature has a moderate contribution to the switching current values, but applied electric fields have significant effects on the values. Importantly, a relaxation of switching current on frequency was observed through this method. By a comparison investigation on PZT ceramics of different compositions non-180 degrees domain switching was found to be responsible for the relaxation. A function, the 'active potential of domains' was proposed to interpret the observed results from the viewpoint of energy. The results obtained provide a new understanding of domain process in ferroelectric ceramics that relaxation of domains is a collective motion of non-180 degrees domains. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码：101 / 103
页数：3
相关论文
共 50 条
  • [1] Coercive and switching fields in ferroelectric ceramics
    Arlt, G
    Calderwood, JH
    APPLIED PHYSICS LETTERS, 2002, 81 (14) : 2605 - 2607
  • [2] The Evaluation of Activation Parameters for Ferroelectric Switching in Soft PZT Ceramics
    Belov, A. Yu.
    Kreher, W. S.
    Nicolai, M.
    FERROELECTRICS, 2009, 391 : 42 - 50
  • [3] The effect of hydrogen on switching properties of ferroelectric PZT thin films
    Joo, Heung Jin
    Lee, Sang Hern
    Kim, Jong Pil
    Ryu, Min Ki
    Kim, Tae Gyoung
    Kim, Do Han
    Jang, Min Su
    Kim, Young Deog
    Ferroelectrics, 2001, 260 (01) : 93 - 98
  • [4] The effect of hydrogen on switching properties of ferroelectric PZT thin films
    Joo, HJ
    Lee, SH
    Kim, JP
    Ryu, MK
    Kim, TG
    Kim, DH
    Jang, MS
    Kim, YD
    FERROELECTRICS, 2001, 260 (1-4) : 437 - 442
  • [5] Properties of nanocrystalline ferroelectric PZT ceramics
    Surowiak, Z
    Kupriyanov, MF
    Czekaj, D
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2001, 21 (10-11) : 1377 - 1381
  • [6] Poling of hard ferroelectric PZT ceramics
    Kamel, Talal M.
    de With, G.
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2008, 28 (09) : 1827 - 1838
  • [7] Effect of lanthanum substitution on ferroelectric properties of niobium doped PZT ceramics
    Singh, Virendra
    Kumar, H. H.
    Kharat, D. K.
    Hait, Samik
    Kulkarni, M. P.
    MATERIALS LETTERS, 2006, 60 (24) : 2964 - 2968
  • [8] Effect of bismuth doping on dielectric, piezoelectric and ferroelectric properties of PZT ceramics
    Chen, J. G.
    Xu, Z.
    Yao, X.
    MATERIALS RESEARCH INNOVATIONS, 2010, 14 (03) : 234 - 237
  • [9] Effect of texturing on polarization switching dynamics in ferroelectric ceramics
    Zhukov, Sergey
    Genenko, Yuri A.
    Koruza, Jurij
    Schultheiss, Jan
    von Seggern, Heinz
    Sakamoto, Wataru
    Ichikawa, Hiroki
    Murata, Tatsuro
    Hayashi, Koichiro
    Yogo, Toshinobu
    APPLIED PHYSICS LETTERS, 2016, 108 (01)
  • [10] Effect of ferroelectric polarization on current response of PZT thin films
    Tagantsev, AK
    Kholkin, AL
    Colla, EL
    Brooks, KG
    Setter, N
    INTEGRATED FERROELECTRICS, 1995, 10 (1-4) : 189 - 204
12345