Impacts of Molecular Orientation on the Hole Injection Barrier Reduction: CuPc/HAT-CN/Graphene

被引:16
作者
Jeong, Junkyeong [1 ]
Park, Soohyung [1 ]
Karig, Seong Jun [2 ]
Lee, Hyunbok [3 ]
Yi, Yeonjin [1 ]
机构
[1] Yonsei Univ, Inst Phys & Appl Phys, 50 Yonsei Ro, Seoul 03722, South Korea
[2] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, 1732 Deogyeong Daero, Yongin 17104, Gyeonggi Do, South Korea
[3] Kangwon Natl Univ, Dept Phys, 1 Gangwondaehak Gil, Chuncheon Si 24341, Gangwon Do, South Korea
基金
新加坡国家研究基金会;
关键词
FIELD-EFFECT TRANSISTORS; CHARGE-GENERATION LAYER; HEXAAZATRIPHENYLENE HEXACARBONITRILE; ORGANIC HETEROJUNCTION; ELECTRONIC-STRUCTURES; RAMAN-SPECTRUM; GRAPHENE; MOBILITY; FUNCTIONALIZATION; SILICON;
D O I
10.1021/acs.jpcc.5b11535
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The molecular orientation affected by the interaction between a substrate and deposited molecules plays an important role in device performance. It is known that the molecular orientation influences not only the charge transport property but also its electronic structure. Therefore, the combined study of morphology and electronic structure is of high importance for device application. As a transparent electrode, graphene has many promising advantages. However, graphene itself does not have an adequate work function for either an anode or a cathode, and thus the insertion of a charge injection layer is necessary for it to be used as an electrode. In this study, the hole injection barrier (HIB) reduction was investigated at the interface of copper phthalocyanine (CuPc)/graphene with the insertion of a hexaazatriphenylene hexacarbonitrile (HAT-CN) layer between them. The insertion of the HAT-CN layer roughens the originally flat graphene surface and it weakens the pi-interaction between CuPc and of graphene. This induces face-on and edge-on mixed orientations of CuPc, while CuPc on bare graphene shows merely a face-on orientation. As a result, the HIB is reduced by the contribution of edge-on CuPc having lower ionization energy (0.37 eV) along with the high work function of the HAT-CN layer (0.26 eV).
引用
收藏
页码:2292 / 2298
页数:7
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