Lead monoxide: a two-dimensional ferromagnetic semiconductor induced by hole-doping

被引：17

作者：

Wang, Yao ^{[1
,2
]}

Zhang, Qingyun ^{[3
]}

Shen, Qian ^{[1
,2
]}

Cheng, Yingchun ^{[1
,2
]}

Schwingenschlogl, Udo ^{[3
]}

Huang, Wei ^{[1
,2
]}

机构：

[1] Nanjing Tech Univ NanjingTech, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Key Lab Flexible Elect, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China

[2] Nanjing Tech Univ NanjingTech, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Inst Adv Mat, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China

[3] King Abdullah Univ Sci & Technol, Phys Sci & Engn Div PSE, Thuwal 239556900, Saudi Arabia

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2017年 / 5卷 / 18期

基金：

中国国家自然科学基金;

关键词：

TRANSITION-METAL DICHALCOGENIDES; DILUTE MAGNETIC SEMICONDUCTORS; 1ST-PRINCIPLES THEORY; SNSE NANOSHEETS; GESE; STRAIN; OXIDES; SPIN; TRANSPORT;

D O I：

10.1039/c7tc00299h

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We employ first-principles calculations to demonstrate ferromagnetic ground states for single-and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.

引用

页码：4520 / 4525

页数：6

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