Characteristics of the Deposition Rate per Unit Power on Pulsed-DC Magnetron Sputtering Source

被引：3

作者：

An, Sanghyuk ^{[1
]}

In, Junghwan ^{[1
]}

Chang, Hongyoung ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Phys, Low Temp Plasma Lab, Taejon 305701, South Korea

来源：

PLASMA PROCESSES AND POLYMERS | 2009年 / 6卷 / 12期

关键词：

deposition rates; duty cycle; magnetron; pulsed discharges; sputtering; AR+;

D O I：

10.1002/ppap.200900026

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The deposition rate per unit power in a pulsed-DC magnetron sputtering source was examined according to the target material, average power, and duty cycle. In a short duty cycle condition, the deposition rate per unit power of Ti and Cu decreased with increasing the pulse power, while that of Al and Ti in a long duty cycle condition did not change in relation to the pulse power. These results can be explained in terms of the characteristics of the sputtering yield in relation to the bombarding ion energy. Based on these results, a pulse voltage with two steps is proposed in order to increase the deposition rate per unit power.

引用

页码：855 / 859

页数：5

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