Characteristics of the Deposition Rate per Unit Power on Pulsed-DC Magnetron Sputtering Source

被引:3
|
作者
An, Sanghyuk [1 ]
In, Junghwan [1 ]
Chang, Hongyoung [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Phys, Low Temp Plasma Lab, Taejon 305701, South Korea
关键词
deposition rates; duty cycle; magnetron; pulsed discharges; sputtering; AR+;
D O I
10.1002/ppap.200900026
中图分类号
O59 [应用物理学];
学科分类号
摘要
The deposition rate per unit power in a pulsed-DC magnetron sputtering source was examined according to the target material, average power, and duty cycle. In a short duty cycle condition, the deposition rate per unit power of Ti and Cu decreased with increasing the pulse power, while that of Al and Ti in a long duty cycle condition did not change in relation to the pulse power. These results can be explained in terms of the characteristics of the sputtering yield in relation to the bombarding ion energy. Based on these results, a pulse voltage with two steps is proposed in order to increase the deposition rate per unit power.
引用
收藏
页码:855 / 859
页数:5
相关论文
共 50 条
  • [1] Deposition of carbon-containing cubic boron nitride films by pulsed-DC magnetron sputtering
    Yang, TS
    Tsai, TH
    Lee, CH
    Cheng, CL
    Wong, MS
    THIN SOLID FILMS, 2001, 398 : 285 - 290
  • [2] On the deposition rate in a high power pulsed magnetron sputtering discharge
    Alami, J.
    Sarakinos, K.
    Mark, G.
    Wuttig, M.
    APPLIED PHYSICS LETTERS, 2006, 89 (15)
  • [3] Nanocrystalline silicon films directly made by pulsed-DC magnetron sputtering
    Cherng, J. S.
    Chang, S. H.
    Hong, S. H.
    SURFACE & COATINGS TECHNOLOGY, 2013, 229 : 18 - 21
  • [4] High Rate Deposition of CdSe Thin Films by Pulsed DC Magnetron Sputtering
    Greenhalgh, R. C.
    Kornienko, V
    Morris, K.
    Abbas, A.
    Bowers, J. W.
    Walls, J. M.
    2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2020, : 2132 - 2135
  • [5] High power pulsed magnetron sputtering: A method to increase deposition rate
    Raman, Priya
    Shchelkanov, Ivan A.
    McLain, Jake
    Ruzic, David N.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2015, 33 (03):
  • [6] THE DEPENDENCE OF DEPOSITION RATE ON POWER INPUT FOR DC AND RF MAGNETRON SPUTTERING
    NYAIESH, AR
    HOLLAND, L
    VACUUM, 1981, 31 (07) : 315 - 317
  • [7] O- density measurements in the pulsed-DC reactive magnetron sputtering of titanium
    Dodd, Robert
    You, ShaoDong
    Bradley, James W.
    THIN SOLID FILMS, 2010, 519 (05) : 1705 - 1711
  • [8] Silicon Oxynitride Barrier Layers Deposited by Pulsed-DC Dual Magnetron Sputtering
    Tinkham, Brad P.
    VAKUUM IN FORSCHUNG UND PRAXIS, 2015, 27 (06) : 40 - 45
  • [9] Silicon oxide sacrificial layers deposited by pulsed-DC magnetron sputtering for MEMS applications
    Gonzalez-Castilla, Sheila
    Olivares, Jimena
    Clement, Marta
    Vergara, Lucia
    Pulido, Laura
    Iborra, Enrique
    Sangrador, Jesus
    SMART SENSORS, ACTUATORS, AND MEMS IV, 2009, 7362
  • [10] Potential for reactive pulsed-dc magnetron sputtering of nanocomposite VOx microbolometer thin films
    Jin, Yao O.
    Ozcelik, Adem
    Horn, Mark W.
    Jackson, Thomas N.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2014, 32 (06):