Critical issues in the formation of quantum computer test structures by ion implantation

被引：18

作者：

Schenkel, T. ^{[1
]}

Lo, C. C. ^{[2
]}

Weis, C. D. ^{[1
]}

Schuh, A. ^{[1
]}

Persaud, A. ^{[1
]}

Bokor, J. ^{[2
]}

机构：

[1] EO Lawrence Berkeley Natl Lab, Div Accelerator & Fus Res, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2009年 / 267卷 / 16期

基金：

美国国家科学基金会;

关键词：

Ion implantation; Highly charged ions; Quantum computing; HIGHLY-CHARGED IONS; NUCLEAR-SPIN; ENERGY-LOSS; SILICON;

D O I：

10.1016/j.nimb.2009.05.061

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The formation of quantum computer test structures in silicon by ion implantation enables the characterization of spin readout mechanisms with ensembles of dopant atoms and the development of single atom devices. We briefly review recent results in the characterization of spin dependent transport and single ion doping and then discuss the diffusion and segregation behaviour of phosphorus, antimony and bismuth ions from low fluence, low energy implantations as characterized through depth profiling by secondary ion mass spectrometry (SIMS). Both phosphorus and bismuth are found to segregate to the SiO(2)/Si interface during activation anneals, while antimony diffusion is found to be minimal. An effect of the ion charge state on the range of antimony ions, (121)Sb(25+), in SiO(2)/Si is also discussed. (C) 2009 Elsevier B. V. All rights reserved.

引用

页码：2563 / 2566

页数：4

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