Photoluminescence processes in SimGen superlattices

被引：4
作者：
Ghosh, S
Weber, J
Presting, H
机构：
[1] Max Planck Inst Festkorperforsch, D-70506 Stuttgart, Germany
[2] Daimler Benz Res Ctr, D-89013 Ulm, Germany
[3] Jawaharlal Nehru Univ, Sch Phys Sci, New Delhi 110067, India
来源：
PHYSICAL REVIEW B | 2000年 / 61卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.61.15625
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have studied at low temperatures the near band-edge photoluminescence in SimGen strained layer superlattices grown by molecular-beam epitaxy on step-graded alloy buffers. The excitation density dependence and the time decay of the phr,photoluminescence identify the origin of the no-phonon transitions in Si6Ge4 and Si9Ge6 strained layer superlattices. At high excitation powers, recombination due to localized excitons dominates, whereas at low excitation powers a faster decay of bound excitons localized to impurities prevails.
引用
收藏
页码：15625 / 15628
页数：4
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